Chinese researchers have announced a new technique to mass produce 2D material wafers, paving the way for high-performance electronics using a successor to silicon.
As semiconductor chips continue to evolve, transistor sizes are approaching the physical limits of silicon-based technology. The search for next-generation semiconductor materials that can deliver superior performance has become a global priority.
Among the candidates, two-dimensional (2D) materials such as molybdenum disulfide (MoS₂) with their atomically thin structure are regarded as promising successors for the post-Moore’s Law era because of their high carrier mobility and low power consumption.
However, one of the core obstacles to commercialisation has been the difficulty of producing them uniformly over large areas and at a high quality.
A team led by Wang Jinlan from Southeast University in Nanjing, working with Wang Xinran and Li Taotao from Nanjing University, announced a critical breakthrough last month.
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Liu Kaihui
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MoS₂
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University of Science and Technology of Beijing
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